1N4148WS-G www.vishay.com vishay semiconductors rev. 1.2, 14-oct-16 1 document number: 85413 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal fast switching diode marking (example only) bar = cathode marking ? xy = type code mechanical data case: sod-323 weight: approx. 4 mg packaging codes/options: 18/10k per 13 " reel (8 mm tape), 10k/box 08/3k per 7 " reel (8 mm tape), 15k/box features ? silicon epitaxial planar diode ? fast switching diodes ? aec-q101 qualified available ? (part number on request) ? base p/n-g3 - green, commercial grade ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 ? ? ? ? ? ? ? ? ? ? ? ? ? note (1) valid provided that electrodes are kept at ambient temperature. note (1) valid provided that electrodes are kept at ambient temperature x y 22610 parts table part ordering code internal construction type marking remarks 1N4148WS-G 1N4148WS-G3-08 or 1N4148WS-G3- 18 single diode ah tape and reel absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 75 v repetitive peak reverse voltage v rrm 100 average rectified current half wave rectification with resistive load (1) f ? 50 hz i f(av) 150 ma surge forward current t < 1 s and t j = 25 c i fsm 350 power dissi pation (1) p tot 200 mw thermal characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit thermal resistance junction to ambient air (1) r thja 650 k/w junction temperature t j 150 c storage temperature range t stg -65 to +150 c operating temperature range t op -55 to +150 c
1N4148WS-G www.vishay.com vishay semiconductors rev. 1.2, 14-oct-16 2 document number: 85413 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ? typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - forward characteristics fig. 2 - dynamic forward resistance vs. forward current fig. 3 - admissible power dissipation vs. ambient temperature fig. 4 - relative capacitance vs. reverse voltage electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 10 ma v f 1v i f = 100 ma v f 1.2 v leakage current v r = 20 v i r 25 na v r = 75 v i r 5 a v r = 100 v i r 100 v r = 20 v, t j = 150 c i r 50 diode capacitance v f = v r = 0 v c d 4pf voltage rise when switching on tested with 50 ma pulses, t p = 0.1 s, rise time < 30 ns, f p = (5 to 100) khz v fr 2.5 v reverse recovery time i f = 10 ma, i r = 1 ma, v r = 6 v, r l = 100 ? t rr 4ns 17437 0 1 2 v f (v) i f (ma) 10 -1 10 -2 1 10 10 2 10 3 t j = 100 c t j = 25 c 17438 f = 1 khz t j = 25 c i f (ma) r f ( ) 10 10 2 10 3 10 4 10 -2 10 -1 110 2 10 2 5 2 5 2 5 2 5 0 50 100 150 200 250 0 50 100 150 200 20324 t amb - ambient temperature (c) p tot - power dissipation (mw) 17440 v r (v) 0.7 0.8 0.9 1.0 1.1 f = 1 mhz t j = 25 c 2 08 6 410 c d (v r ) c d (0 v)
1N4148WS-G www.vishay.com vishay semiconductors rev. 1.2, 14-oct-16 3 document number: 85413 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - leakage current vs. junction temperature fig. 6 - admissible repetitive peak forward current vs. pulse duration 17441 t j (c) i r (na) 10 10 2 10 3 10 4 100 200 2 5 2 5 2 5 2 5 v r = 20 v 1 0 17442 t p (s) i frm (a) 100 1 3 5 10 -5 10 -4 10 -3 10 10 -1 10 -2 25 2 5 25 25 25 25 2 4 10 3 5 2 4 1 3 5 2 4 0.1 i i frm t n = t p /t t = 1/f p t t p n = 0 0.1 0.2 0.5
1N4148WS-G www.vishay.com vishay semiconductors rev. 1.2, 14-oct-16 4 document number: 85413 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches): sod-323 rev. 6 - date: 23. s ept.2016 17443 document no.: s 8-v-3910.02-001 (4) created - date: 24.augu s t.2004 footprint recommendation: 0.6 [0.024] 1.1 [0.043] 1.5 [0.059] 2.50 [0.098] 2.85 [0.112] 1.60 [0.063] 1.95 [0.077] 0 - 8 0.25 [0.010] 0.40 [0.016] cathode bar 0.20 [0.008] 0.40 [0.016] 0.8 [0.031] 0.2 [0.008] 1.15 [0.045] 0.10 [0.004] 0.1 [0.004] max. 0.15 [0.006] 1.6 [0.063] 0.8 [0.031] 0.8 [0.031]
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